Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer
نویسندگان
چکیده
Perpendicular magnetic tunnel junctions with double-interface free layer (p-DMTJs), which exhibit enhanced magnetoresistance (TMR) and thermal stability (?) at the nanoscale, have received considerable interest as building blocks for spintronic data storage devices. Heat-assisted recording (HAMR) techniques been widely employed in mainstream to enable ultrahigh density. However, access is achieved by sensing stray field of selected element using a mechanical “read head”, resulting an unfavorable speed limitation design complexity. To address this issue, integrating laser-assisted switching high-performance junction has R&D; however, it not yet achieved. In study, we experimentally explored femtosecond (fs) p-DMTJ device direct electrical TMR readout. We demonstrate two reconfigurable operations, i.e., binary “write” unidirectional “reset”, interplay fs laser synchronized sequence. further joint effect, phase diagram was obtained. The effect p-DMTJ, well helicity, on also discussed. Results show feasibility writing p-DMTJs, can pave way high-density optospintronic applications.
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ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2021
ISSN: ['1869-1919', '1674-733X']
DOI: https://doi.org/10.1007/s11432-020-3244-8